IPD80R1K4CEATMA1

IR (Infineon Technologies)
有現貨: 4,498

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技術細節

  • Series:CoolMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 240µA

 

  • Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):63W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO252-3
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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